K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova
{"title":"用非真空化学方法获得ZnO薄膜的结构和电物理性质","authors":"K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova","doi":"10.1109/OMEE.2014.6912401","DOIUrl":null,"url":null,"abstract":"This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"2652 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electro-physical properties of ZnO films, obtained by nonvacuum chemical method\",\"authors\":\"K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova\",\"doi\":\"10.1109/OMEE.2014.6912401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.\",\"PeriodicalId\":142377,\"journal\":{\"name\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"volume\":\"2652 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2014.6912401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and electro-physical properties of ZnO films, obtained by nonvacuum chemical method
This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.
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