A. Nikorich, V. Kantser, V. Nikorich, D. Constantinescu
{"title":"PbTe半导体的非线性输运性质","authors":"A. Nikorich, V. Kantser, V. Nikorich, D. Constantinescu","doi":"10.1109/SMICND.1996.557393","DOIUrl":null,"url":null,"abstract":"The results of the I-V characteristics (IVC) investigation on PbTe semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1978 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-linear transport properties of PbTe semiconductors\",\"authors\":\"A. Nikorich, V. Kantser, V. Nikorich, D. Constantinescu\",\"doi\":\"10.1109/SMICND.1996.557393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of the I-V characteristics (IVC) investigation on PbTe semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"1978 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-linear transport properties of PbTe semiconductors
The results of the I-V characteristics (IVC) investigation on PbTe semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.