{"title":"一个x波段到ka波段的SPDT开关，使用200nm SiGe hbt","authors":"C. Poh, R. Schmid, J. Cressler, J. Papapolymerou","doi":"10.1109/SIRF.2012.6160118","DOIUrl":null,"url":null,"abstract":"This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs\",\"authors\":\"C. Poh, R. Schmid, J. Cressler, J. Papapolymerou\",\"doi\":\"10.1109/SIRF.2012.6160118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.\",\"PeriodicalId\":339730,\"journal\":{\"name\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2012.6160118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs
This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.
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