采用65nm逻辑CMOS技术实现的硅化多晶硅熔断器的表征

2006 7th Annual Non-Volatile Memory Technology Symposium Pub Date : 2006-11-01 DOI:10.1109/NVMT.2006.378877

J. Im, Boon Ang, S. Tumakha, S. Paak

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引用次数: 7

摘要

采用65nm逻辑CMOS技术制备并研究了NiSi电可编程熔断器(eFUSE)。通过分析不同工况下熔丝钻头的电气和物理响应，实现了熔丝程序的优化。在熔断器程序中控制Ni的电迁移被认为是实现可靠的高程序后熔断器电阻的关键因素。

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Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology

NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.

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2006 7th Annual Non-Volatile Memory Technology Symposium

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