D. Tuckerman, B. Jarvis, Chang-Ming Lin, P. Patel, M. Hunt
{"title":"具有成本效益的晶圆级老化技术","authors":"D. Tuckerman, B. Jarvis, Chang-Ming Lin, P. Patel, M. Hunt","doi":"10.1109/ICMCM.1994.753526","DOIUrl":null,"url":null,"abstract":"A new wafer-level bum-in method is presented. The method incorporates a silicon \"bum-in substrate\" fabricated using MCM-D substrate technology, and includes integral isolation resistors. The novel, Si wafer-to Si wafer pressure contact technology is based on deformable solder bumps and is functional in a high temperature burn-in environment, immune to thermal expansion mismatch problems, reusable, and does not damage or contaminate bond pads. The method is suitable for high-volume production and can reduce bum-in costs, even for chips that are ultimately destined for single-chip packages.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Cost-Effective Wafer-Level Burn-In Technology\",\"authors\":\"D. Tuckerman, B. Jarvis, Chang-Ming Lin, P. Patel, M. Hunt\",\"doi\":\"10.1109/ICMCM.1994.753526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new wafer-level bum-in method is presented. The method incorporates a silicon \\\"bum-in substrate\\\" fabricated using MCM-D substrate technology, and includes integral isolation resistors. The novel, Si wafer-to Si wafer pressure contact technology is based on deformable solder bumps and is functional in a high temperature burn-in environment, immune to thermal expansion mismatch problems, reusable, and does not damage or contaminate bond pads. The method is suitable for high-volume production and can reduce bum-in costs, even for chips that are ultimately destined for single-chip packages.\",\"PeriodicalId\":363745,\"journal\":{\"name\":\"Proceedings of the International Conference on Multichip Modules\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference on Multichip Modules\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMCM.1994.753526\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference on Multichip Modules","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMCM.1994.753526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new wafer-level bum-in method is presented. The method incorporates a silicon "bum-in substrate" fabricated using MCM-D substrate technology, and includes integral isolation resistors. The novel, Si wafer-to Si wafer pressure contact technology is based on deformable solder bumps and is functional in a high temperature burn-in environment, immune to thermal expansion mismatch problems, reusable, and does not damage or contaminate bond pads. The method is suitable for high-volume production and can reduce bum-in costs, even for chips that are ultimately destined for single-chip packages.