{"title":"SOI多晶硅电阻器谐波的表征与建模","authors":"V. Ruparelia, A. Praveen Paul","doi":"10.1109/imarc49196.2021.9714628","DOIUrl":null,"url":null,"abstract":"This paper presents the various causes of nonlinearities in poly-Silicon resistor: The study in this paper confirms that the most dominant source of 3rd Harmonics in poly-resistors is self-heating. We have also briefly discussed the various self-heating models available and proposed an updated model based on Rth -Cth thermal network. Finally the model to hardware correlation of the 3rd harmonic output power is shown, which highlights that the proposed self-heating model provides the best matching with the hardware results, when compared to the other available models, without compromising the accuracy of other parts of the model.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization and Modeling of Harmonics in SOI Poly-Silicon Resistors\",\"authors\":\"V. Ruparelia, A. Praveen Paul\",\"doi\":\"10.1109/imarc49196.2021.9714628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the various causes of nonlinearities in poly-Silicon resistor: The study in this paper confirms that the most dominant source of 3rd Harmonics in poly-resistors is self-heating. We have also briefly discussed the various self-heating models available and proposed an updated model based on Rth -Cth thermal network. Finally the model to hardware correlation of the 3rd harmonic output power is shown, which highlights that the proposed self-heating model provides the best matching with the hardware results, when compared to the other available models, without compromising the accuracy of other parts of the model.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization and Modeling of Harmonics in SOI Poly-Silicon Resistors
This paper presents the various causes of nonlinearities in poly-Silicon resistor: The study in this paper confirms that the most dominant source of 3rd Harmonics in poly-resistors is self-heating. We have also briefly discussed the various self-heating models available and proposed an updated model based on Rth -Cth thermal network. Finally the model to hardware correlation of the 3rd harmonic output power is shown, which highlights that the proposed self-heating model provides the best matching with the hardware results, when compared to the other available models, without compromising the accuracy of other parts of the model.