{"title":"E-B枯竭区SiGe HBT低注入基流模型","authors":"V. Pant, V. Pandit","doi":"10.1109/EDSSC.2005.1635291","DOIUrl":null,"url":null,"abstract":"Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Injection Base Current Model for SiGe HBT in E-B Depletion Region\",\"authors\":\"V. Pant, V. Pandit\",\"doi\":\"10.1109/EDSSC.2005.1635291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Injection Base Current Model for SiGe HBT in E-B Depletion Region
Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.
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