B. Zat’ko, F. Dubecký, K. Sedlačková, A. Šagátová, P. Boháček, M. Sekáčová, V. Nečas
{"title":"基于4H-SiC高质量外延层的粒子探测器检测性能分析","authors":"B. Zat’ko, F. Dubecký, K. Sedlačková, A. Šagátová, P. Boháček, M. Sekáčová, V. Nečas","doi":"10.1109/ASDAM.2014.6998647","DOIUrl":null,"url":null,"abstract":"The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer\",\"authors\":\"B. Zat’ko, F. Dubecký, K. Sedlačková, A. Šagátová, P. Boháček, M. Sekáčová, V. Nečas\",\"doi\":\"10.1109/ASDAM.2014.6998647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer
The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.