J. Gryglewicz, R. Paszkiewicz, W. Macherzyński, A. Stafiniak, M. Wośko
{"title":"用Cl2/BCL3/Ar等离子体精确刻蚀AlGaN/GaN HEMT结构","authors":"J. Gryglewicz, R. Paszkiewicz, W. Macherzyński, A. Stafiniak, M. Wośko","doi":"10.1109/ASDAM.2014.6998649","DOIUrl":null,"url":null,"abstract":"The aim of work was to develop precise etching process of AlGaN/GaN heterostructures. The study was focused on surface parameters evolution and etch characteristics of etched layers. The surface parameters depended on selection of composition of Cl<sub>2</sub>:BCl<sub>3</sub>:Ar gas mixture, while the amount of boron trichloride in Cl<sub>2</sub>:BCl<sub>3</sub>:Ar was crucial in obtaining precise etch rate of thin AlGaN and thick uid-GaN layers. Changing of BCl<sub>3</sub> amount in the Cl<sub>2</sub>:BCl<sub>3</sub>:Ar mixture in the range of 6% ÷ 60% resulted in increased AlGaN etch rate from 1 nm/min to 19 nm/min and uid-GaN etch rate from 11 nm/min to 55 nm/min. In case of AlGaN almost linear etch characteristic was observed. Surface morphology of uid-GaN was modified by different ratio of BCl<sub>3</sub>/Cl<sub>2</sub>.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Precise etching of AlGaN/GaN HEMT structures with Cl2/BCL3/Ar plasma\",\"authors\":\"J. Gryglewicz, R. Paszkiewicz, W. Macherzyński, A. Stafiniak, M. Wośko\",\"doi\":\"10.1109/ASDAM.2014.6998649\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of work was to develop precise etching process of AlGaN/GaN heterostructures. The study was focused on surface parameters evolution and etch characteristics of etched layers. The surface parameters depended on selection of composition of Cl<sub>2</sub>:BCl<sub>3</sub>:Ar gas mixture, while the amount of boron trichloride in Cl<sub>2</sub>:BCl<sub>3</sub>:Ar was crucial in obtaining precise etch rate of thin AlGaN and thick uid-GaN layers. Changing of BCl<sub>3</sub> amount in the Cl<sub>2</sub>:BCl<sub>3</sub>:Ar mixture in the range of 6% ÷ 60% resulted in increased AlGaN etch rate from 1 nm/min to 19 nm/min and uid-GaN etch rate from 11 nm/min to 55 nm/min. In case of AlGaN almost linear etch characteristic was observed. Surface morphology of uid-GaN was modified by different ratio of BCl<sub>3</sub>/Cl<sub>2</sub>.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998649\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precise etching of AlGaN/GaN HEMT structures with Cl2/BCL3/Ar plasma
The aim of work was to develop precise etching process of AlGaN/GaN heterostructures. The study was focused on surface parameters evolution and etch characteristics of etched layers. The surface parameters depended on selection of composition of Cl2:BCl3:Ar gas mixture, while the amount of boron trichloride in Cl2:BCl3:Ar was crucial in obtaining precise etch rate of thin AlGaN and thick uid-GaN layers. Changing of BCl3 amount in the Cl2:BCl3:Ar mixture in the range of 6% ÷ 60% resulted in increased AlGaN etch rate from 1 nm/min to 19 nm/min and uid-GaN etch rate from 11 nm/min to 55 nm/min. In case of AlGaN almost linear etch characteristic was observed. Surface morphology of uid-GaN was modified by different ratio of BCl3/Cl2.