溅射铝薄膜在振动硅MEMS悬臂梁上的高周疲劳试验与建模

T. Onken, J. Heilmann, T. Bieniek, R. Pufall, B. Wunderle
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引用次数: 6

摘要

铝仍然是电力电子芯片(如mosfet或igbt)最重要的接触金属材料之一。由于铝和硅之间的热膨胀系数(cte)差异很大,并且在高功率瞬态时热点产生的温度很高,这些层容易因热机械疲劳而失效。到目前为止,寿命建模是通过将专用的测试样品置于正常运行期间预期的热循环中来完成的。本文将提出一种利用等温机械载荷建立高周疲劳状态下铝薄膜加速寿命模型的新方法。特别设计的试验台建议补充或取代昂贵和漫长的热循环,并允许现场监测故障指标。
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High cycle fatigue testing and modelling of sputtered aluminium thin films on vibrating silicon MEMS cantilevers
Aluminium is still one of the most important contact metallisations for power electronic chips like MOSFETs or IGBTs. With a large difference in thermal expansion coefficients (CTEs) between aluminium and silicon and the temperatures generated in hot-spots during high power transients, these layers are prone to failure due to thermo-mechanical fatigue. So far, lifetime modelling was done by subjecting dedicated test specimens to the thermal cycling one would expect during normal operation. This paper will propose a novel method for creating accelerated lifetime models of thin aluminium films within the high-cycle fatigue regime by isothermal mechanical loads. The specially designed test stand is suggested to complement or replace expensive and lengthy thermal cycling and allow in-situ monitoring of failure indicators.
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