{"title":"Ag(Ta,Nb)O/sub 3/薄膜变容体的弛豫特性","authors":"J. Koh, A. Lisauskas, A. Grishin","doi":"10.1109/ISAF.2002.1195862","DOIUrl":null,"url":null,"abstract":"Silver tantalate niobate, which shows excellent microwave properties, was selected for this dielectric relaxation study. 4 /spl mu/m gap Au(500nm)/Cr(10nm)/Ag(Ta,Nb)O/sub 3/(0.4/spl mu/m) interdigital capacitors (IDC) fabricated on LaAlO/sub 3/ (LAO) and Al/sub 2/O/sub 3/ (sapphire) substrates were used as test structures. Frequency dispersion in the range 1 kHz to 1 MHz, loss tan/spl delta/, tunability and K-factor @ 100 kV/cm and 1 MHz were about 8.4%, 5.9%, 0.0033 and 17.8 and 3.5%, 3.8%, 0.0035 and 9.9 for IDCs on LAO and sapphire, respectively. Switching the voltage in stair-case mode results in slow and weak relaxation of the capacitance: at 50 kV/cm it was less than 0.05 % for 70 sec. Relaxation of leakage current follows power law: |I(t)/I/sub /spl infin//-1| = (t/12 s)/sup -0.98/.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Relaxation characteristics of Ag(Ta,Nb)O/sub 3/ thin film varactors\",\"authors\":\"J. Koh, A. Lisauskas, A. Grishin\",\"doi\":\"10.1109/ISAF.2002.1195862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silver tantalate niobate, which shows excellent microwave properties, was selected for this dielectric relaxation study. 4 /spl mu/m gap Au(500nm)/Cr(10nm)/Ag(Ta,Nb)O/sub 3/(0.4/spl mu/m) interdigital capacitors (IDC) fabricated on LaAlO/sub 3/ (LAO) and Al/sub 2/O/sub 3/ (sapphire) substrates were used as test structures. Frequency dispersion in the range 1 kHz to 1 MHz, loss tan/spl delta/, tunability and K-factor @ 100 kV/cm and 1 MHz were about 8.4%, 5.9%, 0.0033 and 17.8 and 3.5%, 3.8%, 0.0035 and 9.9 for IDCs on LAO and sapphire, respectively. Switching the voltage in stair-case mode results in slow and weak relaxation of the capacitance: at 50 kV/cm it was less than 0.05 % for 70 sec. Relaxation of leakage current follows power law: |I(t)/I/sub /spl infin//-1| = (t/12 s)/sup -0.98/.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relaxation characteristics of Ag(Ta,Nb)O/sub 3/ thin film varactors
Silver tantalate niobate, which shows excellent microwave properties, was selected for this dielectric relaxation study. 4 /spl mu/m gap Au(500nm)/Cr(10nm)/Ag(Ta,Nb)O/sub 3/(0.4/spl mu/m) interdigital capacitors (IDC) fabricated on LaAlO/sub 3/ (LAO) and Al/sub 2/O/sub 3/ (sapphire) substrates were used as test structures. Frequency dispersion in the range 1 kHz to 1 MHz, loss tan/spl delta/, tunability and K-factor @ 100 kV/cm and 1 MHz were about 8.4%, 5.9%, 0.0033 and 17.8 and 3.5%, 3.8%, 0.0035 and 9.9 for IDCs on LAO and sapphire, respectively. Switching the voltage in stair-case mode results in slow and weak relaxation of the capacitance: at 50 kV/cm it was less than 0.05 % for 70 sec. Relaxation of leakage current follows power law: |I(t)/I/sub /spl infin//-1| = (t/12 s)/sup -0.98/.
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