基于BeO微波集成电路的2瓦5-10 GHZ微型级联放大器设计

P. Wallace, Anthony A. Imrnorlica
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引用次数: 1

摘要

提出了一种利用新型微型混合技术独特性能的倍频带宽功率放大器设计方案。该技术的特点是倒装fet,直接放置在高导热BeO定义的薄膜匹配电路上。这种方法的一个优点是新颖的拓扑,例如这种设计的级联码配置,很容易实现。该设计在5至10 GHz范围内的增益优于7dB,功率增加效率为25%,带有偏置电路,尺寸为4.4 × 6.4 mm。
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A Two-Watt 5-10 GHZ Miniature Cascode Amplifier Design using BeO Microwave Integrated Circuits
An octave bandwidth power amplifier design which exploits the unique capabilities of a new miniature hybrid technology is presented. The technology features flip-chip mounted FETs which are placed directly on thin film matching circuits defined on high thermal conductivity BeO. One advantage of this approach is that novel topologies, such as the cascode configurations of this design, are easily implemented. Better than 7dB gain over 5 to 10 GHz with 25% power-added efficiency is predicted for this design which, with bias circuits, measures 4.4 × 6.4 mm.
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