纳米级CMOS技术的超低电压模拟设计技术

P. Kinget, S. Chatterjee, Y. Tsividis
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引用次数: 24

摘要

本文综述了超低电压模拟集成电路设计面临的挑战和机遇。CMOS技术特征尺寸的持续缩放迫使电源电压成比例地降低。纳米级CMOS技术的超低电源电压(低至0.5 V)要求模拟集成电路中使用的基本电路拓扑结构发生巨大变化。我们探索了MOS晶体管的栅极和体端结合使用来进行信号输入或偏置控制。我们在一个完全集成的0.5 V变容c有源滤波器中演示了几种真正的低压OTA设计和偏置技术,该滤波器采用标准的0.18 μm CMOS技术实现。
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Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies
This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.
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