{"title":"纳米级CMOS技术的超低电压模拟设计技术","authors":"P. Kinget, S. Chatterjee, Y. Tsividis","doi":"10.1109/EDSSC.2005.1635192","DOIUrl":null,"url":null,"abstract":"This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies\",\"authors\":\"P. Kinget, S. Chatterjee, Y. Tsividis\",\"doi\":\"10.1109/EDSSC.2005.1635192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies
This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.