单磁隧道结随机计算单元

Yang Lv, Jianping Wang
{"title":"单磁隧道结随机计算单元","authors":"Yang Lv, Jianping Wang","doi":"10.1109/IEDM.2017.8268504","DOIUrl":null,"url":null,"abstract":"We propose and experimentally demonstrate stochastic computing (SC) with a single magnetic tunnel junction (MJT), exploiting the physical properties and behaviors of the device. Pulse amplitude, bias field, bias current, and pulse width are used as inputs; the output is the switching probability. A single MJT can implement the operations of addition and multiplication. The scheme benefits from the high energy efficiency of an MTJ operated by spintransfer torque (STT), or other future switching mechanisms. Stochastic operations naturally provide high error tolerance, low complexity and low area cost.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A single magnetic-tunnel-junction stochastic computing unit\",\"authors\":\"Yang Lv, Jianping Wang\",\"doi\":\"10.1109/IEDM.2017.8268504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose and experimentally demonstrate stochastic computing (SC) with a single magnetic tunnel junction (MJT), exploiting the physical properties and behaviors of the device. Pulse amplitude, bias field, bias current, and pulse width are used as inputs; the output is the switching probability. A single MJT can implement the operations of addition and multiplication. The scheme benefits from the high energy efficiency of an MTJ operated by spintransfer torque (STT), or other future switching mechanisms. Stochastic operations naturally provide high error tolerance, low complexity and low area cost.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

摘要

我们利用该器件的物理性质和行为,提出并实验证明了单磁隧道结(MJT)的随机计算(SC)。脉冲幅度、偏置场、偏置电流和脉冲宽度作为输入;输出是开关概率。一个MJT可以实现加法和乘法运算。该方案受益于由自旋传递扭矩(STT)或其他未来开关机制操作的MTJ的高能效。随机操作具有高容错性、低复杂度和低面积成本等特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A single magnetic-tunnel-junction stochastic computing unit
We propose and experimentally demonstrate stochastic computing (SC) with a single magnetic tunnel junction (MJT), exploiting the physical properties and behaviors of the device. Pulse amplitude, bias field, bias current, and pulse width are used as inputs; the output is the switching probability. A single MJT can implement the operations of addition and multiplication. The scheme benefits from the high energy efficiency of an MTJ operated by spintransfer torque (STT), or other future switching mechanisms. Stochastic operations naturally provide high error tolerance, low complexity and low area cost.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A novel triboelectric nanogenerator with high performance and long duration time of sinusoidal current generation Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for wearable healthcare device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1