{"title":"硅谐振等离子体波晶体管作为太赫兹探测器的可能性","authors":"J. Park, Sung-Ho Kim, Kyung Rok Kim","doi":"10.23919/SNW.2017.8242296","DOIUrl":null,"url":null,"abstract":"In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V<sup>−1·</sup>s<sup>1</sup>, R-PWT can be operated as THz detector when channel length l= 21–28 nm.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Possibility of Si resonant plasma-wave transistor as THz detector\",\"authors\":\"J. Park, Sung-Ho Kim, Kyung Rok Kim\",\"doi\":\"10.23919/SNW.2017.8242296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V<sup>−1·</sup>s<sup>1</sup>, R-PWT can be operated as THz detector when channel length l= 21–28 nm.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Possibility of Si resonant plasma-wave transistor as THz detector
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V−1·s1, R-PWT can be operated as THz detector when channel length l= 21–28 nm.
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