{"title":"单向多线锯切割石英晶体的技术研究","authors":"T. Watanabe, M. Kojima, K. Yamato","doi":"10.1109/FREQ.2001.956239","DOIUrl":null,"url":null,"abstract":"In a synthetic quartz crystal, it is desirable for the wafer immediately after slicing by a multi-wire-saw, which is a grinding system using free abrasive grains, to have no total thickness variation in the wafer and as near as possible zero warp as this influences the final product. Here, the terms and conditions for realizing high-precision machining were examined. Although based on abrasive grain particle diameter and a 800-1350 m/min. high-speed run of the wire , it turns out that the warp and the total thickness variation of a wafer can be brought close to zero by performing at a speed that brings a workpiece to the state where it is synchronized with the slicing speed. The performance of a unidirectional wire driving system and a bi-directional wire driving system were compared. The total thickness variation of the sliced wafer obtained using the unidirectional wire driving system is half the value of that using the bi-directional system. The various quality factors in slicing technology were examined, and the outstanding performance of unidirectional multi-wire-saw was verified.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of quartz crystal slicing technology by using unidirectional multi-wire-saw\",\"authors\":\"T. Watanabe, M. Kojima, K. Yamato\",\"doi\":\"10.1109/FREQ.2001.956239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In a synthetic quartz crystal, it is desirable for the wafer immediately after slicing by a multi-wire-saw, which is a grinding system using free abrasive grains, to have no total thickness variation in the wafer and as near as possible zero warp as this influences the final product. Here, the terms and conditions for realizing high-precision machining were examined. Although based on abrasive grain particle diameter and a 800-1350 m/min. high-speed run of the wire , it turns out that the warp and the total thickness variation of a wafer can be brought close to zero by performing at a speed that brings a workpiece to the state where it is synchronized with the slicing speed. The performance of a unidirectional wire driving system and a bi-directional wire driving system were compared. The total thickness variation of the sliced wafer obtained using the unidirectional wire driving system is half the value of that using the bi-directional system. The various quality factors in slicing technology were examined, and the outstanding performance of unidirectional multi-wire-saw was verified.\",\"PeriodicalId\":369101,\"journal\":{\"name\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2001.956239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2001.956239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of quartz crystal slicing technology by using unidirectional multi-wire-saw
In a synthetic quartz crystal, it is desirable for the wafer immediately after slicing by a multi-wire-saw, which is a grinding system using free abrasive grains, to have no total thickness variation in the wafer and as near as possible zero warp as this influences the final product. Here, the terms and conditions for realizing high-precision machining were examined. Although based on abrasive grain particle diameter and a 800-1350 m/min. high-speed run of the wire , it turns out that the warp and the total thickness variation of a wafer can be brought close to zero by performing at a speed that brings a workpiece to the state where it is synchronized with the slicing speed. The performance of a unidirectional wire driving system and a bi-directional wire driving system were compared. The total thickness variation of the sliced wafer obtained using the unidirectional wire driving system is half the value of that using the bi-directional system. The various quality factors in slicing technology were examined, and the outstanding performance of unidirectional multi-wire-saw was verified.