Yun Wei, D. Scott, Yingda Dong, A. Gossard, M. Rodwell
{"title":"在MBE再生发射极技术中，具有1.2 /spl mu/m/sup 2/基极-发射极结面积的280 GHz f/sub T/ InP DHBT","authors":"Yun Wei, D. Scott, Yingda Dong, A. Gossard, M. Rodwell","doi":"10.1109/DRC.2004.1367885","DOIUrl":null,"url":null,"abstract":"We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) with a 0.3 /spl mu/m/spl times/4 /spl mu/m regrown base-emitter junction. The HBT exhibits a 280 GHz current gain cutoff frequency (f/sub /spl tau//) and 148 GHz power gain cutoff frequency (f/sub max/). This DHBT was fabricated in a molecular beam epitaxy (MBE) regrown-emitter technology and has the highest f/sub /spl tau// yet reported for a III-V regrown-emitter HBT. The device has V/sub CE.sat/<0.9 V even at J/sub E/=11 mA //spl mu/m/sup 2/, peak AC current gain h/sub 21/=30, and collector breakdown voltage V/sub CEO/=5 V. In this technology, the area of base-emitter junction has been scaled to as small as 1.2 /spl mu/m/sup 2/ while a larger-area extrinsic emitter contact maintains a low 11 /spl Omega/ emitter access resistance.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"280 GHz f/sub T/ InP DHBT with 1.2 /spl mu/m/sup 2/ base-emitter junction area in MBE regrown-emitter technology\",\"authors\":\"Yun Wei, D. Scott, Yingda Dong, A. Gossard, M. Rodwell\",\"doi\":\"10.1109/DRC.2004.1367885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) with a 0.3 /spl mu/m/spl times/4 /spl mu/m regrown base-emitter junction. The HBT exhibits a 280 GHz current gain cutoff frequency (f/sub /spl tau//) and 148 GHz power gain cutoff frequency (f/sub max/). This DHBT was fabricated in a molecular beam epitaxy (MBE) regrown-emitter technology and has the highest f/sub /spl tau// yet reported for a III-V regrown-emitter HBT. The device has V/sub CE.sat/<0.9 V even at J/sub E/=11 mA //spl mu/m/sup 2/, peak AC current gain h/sub 21/=30, and collector breakdown voltage V/sub CEO/=5 V. In this technology, the area of base-emitter junction has been scaled to as small as 1.2 /spl mu/m/sup 2/ while a larger-area extrinsic emitter contact maintains a low 11 /spl Omega/ emitter access resistance.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
280 GHz f/sub T/ InP DHBT with 1.2 /spl mu/m/sup 2/ base-emitter junction area in MBE regrown-emitter technology
We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) with a 0.3 /spl mu/m/spl times/4 /spl mu/m regrown base-emitter junction. The HBT exhibits a 280 GHz current gain cutoff frequency (f/sub /spl tau//) and 148 GHz power gain cutoff frequency (f/sub max/). This DHBT was fabricated in a molecular beam epitaxy (MBE) regrown-emitter technology and has the highest f/sub /spl tau// yet reported for a III-V regrown-emitter HBT. The device has V/sub CE.sat/<0.9 V even at J/sub E/=11 mA //spl mu/m/sup 2/, peak AC current gain h/sub 21/=30, and collector breakdown voltage V/sub CEO/=5 V. In this technology, the area of base-emitter junction has been scaled to as small as 1.2 /spl mu/m/sup 2/ while a larger-area extrinsic emitter contact maintains a low 11 /spl Omega/ emitter access resistance.
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