基于isfet的离子测量器件的准同步热补偿。第2部分:实现

A. S. Pavluchenko, A. Kukla
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摘要

这篇论文是由同一作者先前发表的工作的延续,其中利用固态离子敏感电极(离子敏感场效应晶体管,isfet)设计离子测量传感器的一般原理,可以同时用作温度传感器。在该部分工作中,电路仿真结果证明了使用这种换能器作为离子测量装置的基础的可能性,该装置可以自动补偿电极电位的温度依赖性,而不需要在装置结构中使用专用的测温路径。通过及时分离传感器的工作模式,并通过控制ISFET的偏置电压在它们之间动态切换,实现了两个功能(测电和测温)在单个传感器中的组合。在本部分中,考虑并描述了基于ISFET的离子传感器二次换能器的实际实现。所提出的换能器提供了ISFET偏置电压幅度和极性的编程控制的可能性,从而允许使用ISFET作为温度传感器。在传感器操作的离子测量和温度测量模式之间连续切换,以及由集成到传感器结构中的微处理器对获得的数据进行后续算法处理,可以补偿ISFET电极电位的温度依赖性。给出了传感器主要部件的电路框图,即用于ISFET偏置的可编程电压源和用于传感器输出读出的跨阻放大器,并对ISFET传感器的测温性能和热补偿效率进行了实验估计。
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Quasi-synchronous thermocompensation for ISFET-based ionometric devices. Part 2: Implementation
This paper is a continuation of the previously published work by the same authors, where general principles of the ionometric transducer design utilizing solid-state ion-sensitive electrodes (ion-sensitive field effect transistors, ISFETs) that can simultaneously serve as temperature sensors were laid out. In that part of the work, a possibility of using such transducer as a basis for ionometric device that performs automatic compensation of the temperature dependence of electrode potential without the need for a dedicated thermometric measuring path in the device structure was demonstrated with the circuit simulation results. Combination of the two functions (ionometric and thermometric) in a single sensor is achieved by separating the sensor operation modes in time, and dynamically switching between them by controlling the ISFET bias voltage. In the present part, a practical implementation of the secondary transducer for ionometric sensors based on ISFET is considered and described. The proposed transducer provides the possibility of programmatic control of the ISFET bias voltage magnitude and polarity, thus allowing to use the ISFET as a temperature sensor. Consecutive switching between ionometric and thermometric modes of sensor operation, along with subsequent algorithmic processing of the obtained data by a microprocessor incorporated into the transducer structure, allows to compensate the temperature dependence of the ISFET electrode potential. Circuit diagrams for the main components of transducer — namely, the programmable voltage source for ISFET biasing and the transimpedance amplifier for the sensor output readout — are presented, as well as the experimental estimation of the ISFET sensor thermometric properties and the efficiency of thermocompensation.
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