{"title":"433mhz AB类CMOS功率放大器的设计","authors":"Seoung-Jae Yoo, H. Ahn, M. Hella, M. Ismail","doi":"10.1109/SSMSD.2000.836442","DOIUrl":null,"url":null,"abstract":"This paper reports the design and simulation results of a 433 MHz Power Amplifier (PA) which is designed in a 0.5 /spl mu/m CMOS technology and can provide variable gain modes. The PA consists of a driver and an output stage, and the gain is adjustable using digital codes. In this paper, 16.5 dB and 3.5 dB gain modes are chosen. This amplifier matches a 50 ohm load and provides 20 mW of output power at 432-434 MHz from a 3 V supply. The overall power efficiency is 30%.","PeriodicalId":166604,"journal":{"name":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"The design of 433 MHz class AB CMOS power amplifier\",\"authors\":\"Seoung-Jae Yoo, H. Ahn, M. Hella, M. Ismail\",\"doi\":\"10.1109/SSMSD.2000.836442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the design and simulation results of a 433 MHz Power Amplifier (PA) which is designed in a 0.5 /spl mu/m CMOS technology and can provide variable gain modes. The PA consists of a driver and an output stage, and the gain is adjustable using digital codes. In this paper, 16.5 dB and 3.5 dB gain modes are chosen. This amplifier matches a 50 ohm load and provides 20 mW of output power at 432-434 MHz from a 3 V supply. The overall power efficiency is 30%.\",\"PeriodicalId\":166604,\"journal\":{\"name\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-02-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSMSD.2000.836442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSMSD.2000.836442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of 433 MHz class AB CMOS power amplifier
This paper reports the design and simulation results of a 433 MHz Power Amplifier (PA) which is designed in a 0.5 /spl mu/m CMOS technology and can provide variable gain modes. The PA consists of a driver and an output stage, and the gain is adjustable using digital codes. In this paper, 16.5 dB and 3.5 dB gain modes are chosen. This amplifier matches a 50 ohm load and provides 20 mW of output power at 432-434 MHz from a 3 V supply. The overall power efficiency is 30%.