用于1T-DRAM应用的MSDRAM、A2RAM和Z2-FET性能基准

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551674

J. Lacord, M. Parihar, C. Navarro, François Tcheme Wakam, M. Bawedin, S. Cristoloveanu, F. Gamiz, J. Barbe

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引用次数: 7

摘要

在这项研究中，我们提出了在SOI衬底上三种有前途的1T-DRAM器件结构之间的性能基准:MSDRAM, A2RAM和$\ mathm {Z}^{2} -$FET。为了公平比较，使用具有相同基本校准和典型28FDSOI技术参数的TCAD仿真。讨论了每种变体的优点和局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications

In this study, we propose a benchmark of performance between three promising 1T-DRAM device structures on SOI substrate: MSDRAM, A2RAM and $\mathrm{Z}^{2} -$FET. For a fair comparison, TCAD simulation with the same basic calibration and typical 28FDSOI technological parameters was used. The merits and limitations of each variant are discussed.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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