高性能硅锗技术

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553117

S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame

{"title":"高性能硅锗技术","authors":"S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame","doi":"10.1109/DRC.2005.1553117","DOIUrl":null,"url":null,"abstract":"This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a \"mature\" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-performance silicon-germanium technology\",\"authors\":\"S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame\",\"doi\":\"10.1109/DRC.2005.1553117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a \\\"mature\\\" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文将重点介绍硅锗(SiGe)在高性能硅基半导体技术中的各种广泛应用。SiGe现在可以称得上是一项“成熟”的技术——自第一台SiGe HBT工作以来，已经过去了将近20年。SiGe作为一种可批量生产的硅技术已经有10年的历史了

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High-performance silicon-germanium technology

This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a "mature" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

自引率

0.00%

发文量

期刊最新文献

High-power stable field-plated AlGaN-GaN MOSHFETs A new four-terminal hybrid silicon/organic field-effect sensor device Tunnel junctions in GaN/AlN for optoelectronic applications Data retention behavior in the embedded SONOS nonvolatile memory cell Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs