微波低噪声应用中伪晶hemt的噪声和增益性能随温度的变化

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493704

P. Livreri, M. Sannino

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引用次数: 0

摘要

高电子迁移率晶体管(hemt)及其伪晶晶体管(pHEMT)由于其固有的低噪声特性而被广泛应用于低噪声应用设计中。本文对用于微波低噪声应用的商用pHEMT系列在温度下的噪声和增益性能进行了仔细的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications

The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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