采用HfSiON栅极介质和TiN栅极电极的nmosfet中FN应力诱导V/sub / shift的弛豫

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367761

R. Choi, B. Lee, K. Matthews, J. Sim, G. Bersuker, L. Larson, J.C. Lee

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引用次数: 14

摘要

以硅酸铪(HfSiON)为代表的铪基材料已被广泛研究以取代传统的SiO/ sub2 /作为栅极介质。除了介质击穿和其他磨损特性外，由电应力引起的阈值电压偏移(Vth)也是主要的可靠性问题之一。在这项工作中，已经发现由Fowler-Nordheim (FN)应力引起的V/sub / shift的很大一部分实际上是可逆的。研究了这种V/sub /不稳定性的来源，并讨论了它对常规可靠性试验的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Relaxation of FN stress induced V/sub th/ shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode

Hafnium based materials like hafnium silicate (HfSiON) have been studied intensively for replacing conventional SiO/sub 2/, as gate dielectrics. In addition to dielectric breakdown and other wearout characteristics, threshold voltage shift (Vth) caused by electrical stress is one of the major reliability concerns. In this work, it has been found that a significant portion of V/sub th/ shift, induced by Fowler-Nordheim (FN) stress, is actually reversible. The origin of this V/sub th/ instability has been investigated and its implications on conventional reliability tests are discussed.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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