{"title":"基于AlN的表面微加工BAW谐振器","authors":"R. Lanz, P. Carazzetti, P. Muralt","doi":"10.1109/ULTSYM.2002.1193560","DOIUrl":null,"url":null,"abstract":"This contribution deals with surface micromachined BAW resonators based on AlN thin films. Process, design issues and first results are presented and discussed. Devices with two resonators in series having a resonance frequency between 7 and 8 GHz show promising results. Coupling coefficients of k/sub t//sup 2/ =3.8% and quality factors of 100 to 150 have been obtained with resonators having a approximate size of 30/spl times/30/spl mu/m adapted for a 50/spl Omega/ system. These results are clearly inferior to earlier results obtained with SMR designs (k/sub t//sup 2/=5.5% and Q=580). Reasons are too high serial resistances caused by bad step coverage of the top electrode, possibly also incomplete etching of the sacrificial layer, and warping by too large film stresses.","PeriodicalId":378705,"journal":{"name":"2002 IEEE Ultrasonics Symposium, 2002. Proceedings.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Surface micromachined BAW resonators based on AlN\",\"authors\":\"R. Lanz, P. Carazzetti, P. Muralt\",\"doi\":\"10.1109/ULTSYM.2002.1193560\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This contribution deals with surface micromachined BAW resonators based on AlN thin films. Process, design issues and first results are presented and discussed. Devices with two resonators in series having a resonance frequency between 7 and 8 GHz show promising results. Coupling coefficients of k/sub t//sup 2/ =3.8% and quality factors of 100 to 150 have been obtained with resonators having a approximate size of 30/spl times/30/spl mu/m adapted for a 50/spl Omega/ system. These results are clearly inferior to earlier results obtained with SMR designs (k/sub t//sup 2/=5.5% and Q=580). Reasons are too high serial resistances caused by bad step coverage of the top electrode, possibly also incomplete etching of the sacrificial layer, and warping by too large film stresses.\",\"PeriodicalId\":378705,\"journal\":{\"name\":\"2002 IEEE Ultrasonics Symposium, 2002. Proceedings.\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE Ultrasonics Symposium, 2002. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2002.1193560\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE Ultrasonics Symposium, 2002. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2002.1193560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This contribution deals with surface micromachined BAW resonators based on AlN thin films. Process, design issues and first results are presented and discussed. Devices with two resonators in series having a resonance frequency between 7 and 8 GHz show promising results. Coupling coefficients of k/sub t//sup 2/ =3.8% and quality factors of 100 to 150 have been obtained with resonators having a approximate size of 30/spl times/30/spl mu/m adapted for a 50/spl Omega/ system. These results are clearly inferior to earlier results obtained with SMR designs (k/sub t//sup 2/=5.5% and Q=580). Reasons are too high serial resistances caused by bad step coverage of the top electrode, possibly also incomplete etching of the sacrificial layer, and warping by too large film stresses.
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