qpc的1D g因子和0.7异常具有对密度的独立控制

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472358

A. Burke, O. Klochan, A. Hamilton, I. Farrer, D. Ritchie, A. Micolich

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摘要

本文报道了量子点接触(qpc)中一维land g因子g*与电子密度的关系。我们获得了高达2.8的g*值，大大超过了Al-GaAs/GaAs qpc的先前值，并接近InGaAs/InP qpc的值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The 1D g-factor and 0.7 anomaly in QPCs with independent control over density

We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.

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COMMAD 2012

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