HD-FOWLP技术中高带宽存储器和高级接口总线接口的电气设计挑战

M. D. Rotaru, Li Kangrong
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引用次数: 1

摘要

宽而慢的总线接口,如高带宽存储器(HBM)和高级接口总线(AIB),是嵌入式多芯片互连桥(EMIB)和片上基板(coos)等技术开发和实现背后的主要驱动力。这些技术可以使用后端线(BEOL)方法创建非常密集的互连结构,用于互连小芯片并在封装应用中形成功能系统。随着最近制造和工艺技术的改进,基于有机的高密度再分布层方法,如HD-FOWLP,已成为EMIB和cobos的流行替代品。利用目前的制造技术,可以实现2\text{um}\乘以2\text{um}$横截面和相邻线之间2um间距的再分布层,或者1\text{um}\乘以1\text{um}$横截面的最小间距为1um。在这项工作中,通过仿真和电气测量研究了有机基精细RDL封装的电气设计挑战。
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Electrical design challenges in High Bandwidth Memory and Advanced Interface Bus interfaces on HD-FOWLP technology
Wide and slow bus interfaces such as High Bandwidth Memory (HBM) and Advanced Interface Bus (AIB) are the main drivers behind the development and implementation of technologies such as Embedded Multi-die Interconnect Bridge (EMIB) and Chip-on-Wafer-on-Substrate (CoWoS). These technologies can create very dense interconnect structures using back end of line (BEOL) approaches used to interconnect chiplets and to form functional system in package applications. With recent improvements in fabrication and process technologies organic based high density redistribution layer approaches such HD-FOWLP have become popular alternatives to EMIB and CoWoS. Redistribution layers with $2\text{um}\times 2\text{um}$ cross section and 2um space between adjacent lines or $1\text{um}\times 1\text{um}$ cross section with a minimum spacing of 1um have become achievable with the current fabrication technology. In this work the electrical design challenges in organic based fine RDL packages have been studied via simulation and electrical measurements.
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