Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang
{"title":"晶圆级双辅助半自动干转移及高性能单层CVD WS2晶体管的制备","authors":"Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang","doi":"10.1109/vlsitechnologyandcir46769.2022.9830376","DOIUrl":null,"url":null,"abstract":"A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor\",\"authors\":\"Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830376\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830376\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830376","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor
A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.