{"title":"EBIC在寻找颗粒缺陷中的应用","authors":"L. Yeoh, Kok-Cheng Chong, Susan X. Li","doi":"10.1109/IPFA55383.2022.9915741","DOIUrl":null,"url":null,"abstract":"EBIC (Electron Beam Induced Current) is a microscopic technique offered by nano-probing system to characterize the electrical property of active circuits in a semiconductor device. EBIC is also a powerful local fault isolation technique which is capable to narrow down the potential physical defect site. In this paper, we will show three case studies of applying EBIC technique coupled with various failure analysis equipment to discover particle defects buried in metal and poly structures in Flash memory devices.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EBIC Application in Finding Particle Defects\",\"authors\":\"L. Yeoh, Kok-Cheng Chong, Susan X. Li\",\"doi\":\"10.1109/IPFA55383.2022.9915741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"EBIC (Electron Beam Induced Current) is a microscopic technique offered by nano-probing system to characterize the electrical property of active circuits in a semiconductor device. EBIC is also a powerful local fault isolation technique which is capable to narrow down the potential physical defect site. In this paper, we will show three case studies of applying EBIC technique coupled with various failure analysis equipment to discover particle defects buried in metal and poly structures in Flash memory devices.\",\"PeriodicalId\":378702,\"journal\":{\"name\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA55383.2022.9915741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EBIC (Electron Beam Induced Current) is a microscopic technique offered by nano-probing system to characterize the electrical property of active circuits in a semiconductor device. EBIC is also a powerful local fault isolation technique which is capable to narrow down the potential physical defect site. In this paper, we will show three case studies of applying EBIC technique coupled with various failure analysis equipment to discover particle defects buried in metal and poly structures in Flash memory devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
