晶圆规模集成

M. C. Driver, H. Nathanson, R. Freitag, G. W. Eldridge, R. C. Clarke, M. M. Sopira
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引用次数: 1

摘要

介绍了西屋射频晶圆级集成(RFWSI)计划,这是一种控制战斗机雷达模块成本的新方法。该计划所需的技术包括在直径3英寸的半绝缘砷化镓晶圆中植入三颗硅,以及在紧密间隔的元素之间提供隔离的质子植入。晶圆将被切割,以便包含几个模块的“瓦片”可以安装在载体上,并形成数百个模块的瓦片阵列的一部分。每一块瓷砖都有电流通过砷化镓到达底层。该结构的组成部分包括冷却通道、用于信号分布的射频和直流流形以及宽带喇叭陷波天线。使用这种配置构造有源阵列将降低装配成本,因为零件数量减少了。本文对该方法在先进战斗机设计中的应用进行了研究
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Wafer scale integration
A description is given of the Westinghouse RF Wafer-Scale Integration (RFWSI) program, a novel approach to controlling the cost of fighter aircraft radar modules. The technologies required for the program include three implants of silicon into 3-inch-diameter semi-insulating GaAs wafers and proton implants providing isolation between the closely spaced elements. Wafers will be cut so that a 'tile' containing several modules may be mounted on a carrier and form part of a tiled array of several hundred modules. Each tile will have electric feeds that pass through the gallium arsenide to the underlying layers. Integral to this structure are the cooling channels, the RF and DC manifolds for the distribution of signals, and the wideband flared notch antenna. Construction of an active array using this configuration will result in reduced assembly costs because the parts count is reduced. The implementation of this approach in the design of advanced fighter aircraft is considered.<>
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Power generation of millimeter-wave diamond IMPATT diodes Microwave applications of photonics circuits Low temperature MBE growth of GaAs and AlInAs for high speed devices Modeling of large signal device/circuit interactions Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise tetrahertz receiver applications
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