{"title":"低噪声，高速InP/InGaAs HBTs","authors":"S. Hsu, D. Pavlidis","doi":"10.1109/GAAS.2001.964375","DOIUrl":null,"url":null,"abstract":"High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low noise, high-speed InP/InGaAs HBTs\",\"authors\":\"S. Hsu, D. Pavlidis\",\"doi\":\"10.1109/GAAS.2001.964375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.
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