K. Murakami, M. Ueda, M. Ohmori, I. Ohkura, Y. Horiba, T. Nakano
{"title":"双离子注入dsamos双极器件","authors":"K. Murakami, M. Ueda, M. Ohmori, I. Ohkura, Y. Horiba, T. Nakano","doi":"10.1109/IEDM.1977.189200","DOIUrl":null,"url":null,"abstract":"The new DSAMOS-bipolar compatible devices have been developed by utilizing the high transcoductance / input impedance of DSA MOS transistor and driving capability of bipolar one for large current. In the double diffused technology, dopants were deposited by the ion implanting method, which resulted in the better threshold voltage controllability (ΔV/Vth=0.05) for DSA MOSFET and high current gain (β=800) for npn transistor. High transconductance of 1.3 mΩ3 was obtained with small size transistor (W =300 µm). The optimum value of base dose was determined by the relationship between Vth and ρsb (base sheet resistance for analogue circuit use.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"2007 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Double ion implanted DSAMOS-bipolar devices\",\"authors\":\"K. Murakami, M. Ueda, M. Ohmori, I. Ohkura, Y. Horiba, T. Nakano\",\"doi\":\"10.1109/IEDM.1977.189200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The new DSAMOS-bipolar compatible devices have been developed by utilizing the high transcoductance / input impedance of DSA MOS transistor and driving capability of bipolar one for large current. In the double diffused technology, dopants were deposited by the ion implanting method, which resulted in the better threshold voltage controllability (ΔV/Vth=0.05) for DSA MOSFET and high current gain (β=800) for npn transistor. High transconductance of 1.3 mΩ3 was obtained with small size transistor (W =300 µm). The optimum value of base dose was determined by the relationship between Vth and ρsb (base sheet resistance for analogue circuit use.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"2007 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The new DSAMOS-bipolar compatible devices have been developed by utilizing the high transcoductance / input impedance of DSA MOS transistor and driving capability of bipolar one for large current. In the double diffused technology, dopants were deposited by the ion implanting method, which resulted in the better threshold voltage controllability (ΔV/Vth=0.05) for DSA MOSFET and high current gain (β=800) for npn transistor. High transconductance of 1.3 mΩ3 was obtained with small size transistor (W =300 µm). The optimum value of base dose was determined by the relationship between Vth and ρsb (base sheet resistance for analogue circuit use.
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