化学机械抛光工艺制备Pb(Zr,Ti)O3/CeO2/Si MFIS结构的电学性能

2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI:10.1109/ISAF.2008.4693729

N. Kim, P. Ko, Woo-Sun Lee

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摘要

采用化学机械抛光(CMP) damascene工艺制备了Au/PZT/CeO2/Si金属-铁电-绝缘体-硅场效应晶体管(mfisfet)。它可以很容易地制造出没有表面和/或等离子体损伤的垂直侧壁。虽然残余极化值较低，但成功地获得了典型的铁电特性。

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Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process

Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.

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2008 17th IEEE International Symposium on the Applications of Ferroelectrics

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