纳米级CMOS技术中的低功耗、低失调、面积效率比较器设计

V. Melikyan, V. P. Grigoryants, A. Mkhitaryan, G. Petrosyan, A. Hayrapetyan, Zaven M. Avetisyan, Simon H. Gharibyan, N. H. Beglaryan
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引用次数: 0

摘要

采用SAED 32/28nm CMOS工艺设计了低功耗、高分辨率的SAR ADC时钟比较器。模拟比较器基于数字单元,因此不存在稳定性问题,由差分对引起的不匹配,可以很容易地集成到VLSI系统的数字部分,功耗小,面积小。考虑比较器各阶传递特性与计算的总偏移量不匹配,推导了比较器输入偏移量方程。最后,在设计的10位SAR ADC的PVT变化情况下,验证了比较器的性能。
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Low Power, Low Offset, Area Efficient Comparator Design in Nanoscale CMOS Technology
Low power, area efficient clocked comparator with high resolution was designed in SAED 32/28nm CMOS process for SAR ADC applications. The analog comparator is based on digital cells, hence doesn't have stability issues, mismatches induced by the differential pair, can be easily integrated to the digital part of VLSI systems, dissipates small power, and has a small area. Input offset equation of the comparator was derived considering mismatches between transfer characteristics of the comparator stages and calculated total offset with Monte-Carlo simulation. Finally, the comparator performance was verified over PVT variation in designed 10-bit SAR ADC.
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