一个0.18µm CMOS, - 92 db THD, 105 dba DR,三阶音频d类放大器

D. Cartasegna, P. Malcovati, L. Crespi, A. Baschirotto
{"title":"一个0.18µm CMOS, - 92 db THD, 105 dba DR,三阶音频d类放大器","authors":"D. Cartasegna, P. Malcovati, L. Crespi, A. Baschirotto","doi":"10.1109/ESSCIRC.2013.6649099","DOIUrl":null,"url":null,"abstract":"This paper presents a third-order audio class-D amplifier, implemented in a 0.18-μm CMOS technology, achieving -92 dB of total harmonic distortion (THD) and 105 dBA of dynamic range (DR) with a quiescent current of 2 mA. The circuit delivers up to 2.4 W on a 4-Ω load with a peak efficiency of 88%. The THD performance, achieved thanks to the third-order loop filter, makes the proposed device suitable for high-end audio applications, where linear amplifiers are still the dominant solution.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.18-µm CMOS, −92-dB THD, 105-dBA DR, third-order audio class-D amplifier\",\"authors\":\"D. Cartasegna, P. Malcovati, L. Crespi, A. Baschirotto\",\"doi\":\"10.1109/ESSCIRC.2013.6649099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a third-order audio class-D amplifier, implemented in a 0.18-μm CMOS technology, achieving -92 dB of total harmonic distortion (THD) and 105 dBA of dynamic range (DR) with a quiescent current of 2 mA. The circuit delivers up to 2.4 W on a 4-Ω load with a peak efficiency of 88%. The THD performance, achieved thanks to the third-order loop filter, makes the proposed device suitable for high-end audio applications, where linear amplifiers are still the dominant solution.\",\"PeriodicalId\":183620,\"journal\":{\"name\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2013.6649099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种采用0.18 μm CMOS技术实现的三阶音频d类放大器,在静态电流为2 mA的情况下,总谐波失真(THD)为-92 dB,动态范围(DR)为105 dBA。该电路在4-Ω负载下提供高达2.4 W的功率,峰值效率为88%。得益于三阶环路滤波器的THD性能,使所提出的器件适用于高端音频应用,其中线性放大器仍然是主要解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 0.18-µm CMOS, −92-dB THD, 105-dBA DR, third-order audio class-D amplifier
This paper presents a third-order audio class-D amplifier, implemented in a 0.18-μm CMOS technology, achieving -92 dB of total harmonic distortion (THD) and 105 dBA of dynamic range (DR) with a quiescent current of 2 mA. The circuit delivers up to 2.4 W on a 4-Ω load with a peak efficiency of 88%. The THD performance, achieved thanks to the third-order loop filter, makes the proposed device suitable for high-end audio applications, where linear amplifiers are still the dominant solution.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 180nm fully-integrated dual-channel reconfigurable receiver for GNSS interoperations A 40 nm LP CMOS self-biased continuous-time comparator with sub-100ps delay at 1.1V & 1.2mW MEMS for automotive and consumer electronics A resistor-based temperature sensor for MEMS frequency references A 13.2% locking-range divide-by-6, 3.1mW, ILFD using even-harmonic-enhanced direct injection technique for millimeter-wave PLLs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1