Au催化剂对GaAs (111)B表面退火的影响

COMMAD 2012 Pub Date : 1900-01-01 DOI:10.1109/COMMAD.2012.6472333

Z. Liao, H. Y. Xu, W. Sun, Y. Guo, L. Yang, Z. Chen, J. Zou, Z. Lu, P. P. Chen, W. Lu

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摘要

为了了解III-V型外延纳米线的生长机理和催化剂的作用，采用分子束外延(MBE)系统对带有Au薄膜的GaAs (111)B衬底进行了退火处理。扫描/透射电镜(SEM/TEM)研究表明，在退火过程中，Au催化剂形成并显著影响了GaAs衬底的表面形貌。

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Effects of Au catalyst on GaAs (111)B surface during annealing

To understand the growth mechanism and the effect of catalysts in growing III-V epitaxial nanowires, GaAs (111)B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.

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COMMAD 2012

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