创建35毫米相机有源像素传感器

G. Chapman, Y. Audet
{"title":"创建35毫米相机有源像素传感器","authors":"G. Chapman, Y. Audet","doi":"10.1109/DFTVS.1999.802865","DOIUrl":null,"url":null,"abstract":"A 36/spl times/24 mm active pixel sensor imaging area device is studied which would be ideal for use with standard 35 mm cameras. By applying multichip methods to active pixel sensors, the 39/spl times/30 mm system contains on board all the control circuitry and A/D converters, so the system outputs digital data. The large area requires a redundancy of design for a high yield. This starts with the active pixel cell, which able to withstand several defects and still be repairable, which CCD cells are not. The whole system is targeted at preventing bad rows or columns. By using spares in the row and column circuitry, as well as spare A/D converters the chip yield is only limited by a relatively small logic and control block. With repairs the yield of this 11.7 sq. cm system goes from almost nil to more than 80%-93% with modest defect densities of 1.5 to 0.5 per sq. cm. By being a retrofit for current 35 mm cameras, and having larger photodiode pixels than current APS's this CMOS device would be nearly as sensitive as CCD's but at much lower production costs and much higher yields.","PeriodicalId":448322,"journal":{"name":"Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Creating 35 mm camera active pixel sensors\",\"authors\":\"G. Chapman, Y. Audet\",\"doi\":\"10.1109/DFTVS.1999.802865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 36/spl times/24 mm active pixel sensor imaging area device is studied which would be ideal for use with standard 35 mm cameras. By applying multichip methods to active pixel sensors, the 39/spl times/30 mm system contains on board all the control circuitry and A/D converters, so the system outputs digital data. The large area requires a redundancy of design for a high yield. This starts with the active pixel cell, which able to withstand several defects and still be repairable, which CCD cells are not. The whole system is targeted at preventing bad rows or columns. By using spares in the row and column circuitry, as well as spare A/D converters the chip yield is only limited by a relatively small logic and control block. With repairs the yield of this 11.7 sq. cm system goes from almost nil to more than 80%-93% with modest defect densities of 1.5 to 0.5 per sq. cm. By being a retrofit for current 35 mm cameras, and having larger photodiode pixels than current APS's this CMOS device would be nearly as sensitive as CCD's but at much lower production costs and much higher yields.\",\"PeriodicalId\":448322,\"journal\":{\"name\":\"Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFTVS.1999.802865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFTVS.1999.802865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

研究了一种适用于标准35mm相机的36/spl倍/ 24mm有源像素传感器成像区域装置。通过对有源像素传感器应用多芯片方法,39/spl倍/ 30mm系统包含板载所有控制电路和A/D转换器,因此系统输出数字数据。面积大要求设计冗余以获得高成品率。这从有源像素单元开始,它能够承受几个缺陷并且仍然是可修复的,而CCD单元则不能。整个系统的目标是防止坏的行或列。通过在行和列电路中使用备件,以及备用A/D转换器,芯片产量仅受相对较小的逻辑和控制块的限制。加上修理,这11.7平方英尺的面积。Cm系统从几乎为零到超过80%-93%,缺陷密度为每平方1.5到0.5。厘米。通过对现有35毫米相机的改进,并且比目前的APS具有更大的光电二极管像素,这种CMOS器件将几乎与CCD一样敏感,但生产成本要低得多,产量要高得多。
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Creating 35 mm camera active pixel sensors
A 36/spl times/24 mm active pixel sensor imaging area device is studied which would be ideal for use with standard 35 mm cameras. By applying multichip methods to active pixel sensors, the 39/spl times/30 mm system contains on board all the control circuitry and A/D converters, so the system outputs digital data. The large area requires a redundancy of design for a high yield. This starts with the active pixel cell, which able to withstand several defects and still be repairable, which CCD cells are not. The whole system is targeted at preventing bad rows or columns. By using spares in the row and column circuitry, as well as spare A/D converters the chip yield is only limited by a relatively small logic and control block. With repairs the yield of this 11.7 sq. cm system goes from almost nil to more than 80%-93% with modest defect densities of 1.5 to 0.5 per sq. cm. By being a retrofit for current 35 mm cameras, and having larger photodiode pixels than current APS's this CMOS device would be nearly as sensitive as CCD's but at much lower production costs and much higher yields.
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