{"title":"基于阈值的参考电压与pn结温度补偿","authors":"Yen-Ting Wang, R. Geiger, Shu-Chuan Huang","doi":"10.1109/MWSCAS.2009.5236128","DOIUrl":null,"url":null,"abstract":"A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6µm CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/°C over a 195 °C range.","PeriodicalId":254577,"journal":{"name":"2009 52nd IEEE International Midwest Symposium on Circuits and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Threshold-based voltage reference with pn- junction temperature compensation\",\"authors\":\"Yen-Ting Wang, R. Geiger, Shu-Chuan Huang\",\"doi\":\"10.1109/MWSCAS.2009.5236128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6µm CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/°C over a 195 °C range.\",\"PeriodicalId\":254577,\"journal\":{\"name\":\"2009 52nd IEEE International Midwest Symposium on Circuits and Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 52nd IEEE International Midwest Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2009.5236128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 52nd IEEE International Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2009.5236128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Threshold-based voltage reference with pn- junction temperature compensation
A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6µm CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/°C over a 195 °C range.