Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess

Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.