M. Razanoelina, H. Firdaus, Yasuo Takahashi, A. Fujiwara, Y. Ono
{"title":"面向新兴水电子的硅电子纳米吸引器","authors":"M. Razanoelina, H. Firdaus, Yasuo Takahashi, A. Fujiwara, Y. Ono","doi":"10.23919/SNW.2019.8782925","DOIUrl":null,"url":null,"abstract":"The electron nano-aspirator, which we have recently proposed and demonstrated, is a Si device with a T-shaped branch, and can enhance the MOS-transistor current by utilizing the hydrodynamic nature of electrons. Here, we present an investigation on the controllability of the device characteristics and discuss the performance improvement for the future development of low power circuits based on the electron hydrodynamics.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Si Electron Nano-Aspirator towards Emerging Hydro-Electronics\",\"authors\":\"M. Razanoelina, H. Firdaus, Yasuo Takahashi, A. Fujiwara, Y. Ono\",\"doi\":\"10.23919/SNW.2019.8782925\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electron nano-aspirator, which we have recently proposed and demonstrated, is a Si device with a T-shaped branch, and can enhance the MOS-transistor current by utilizing the hydrodynamic nature of electrons. Here, we present an investigation on the controllability of the device characteristics and discuss the performance improvement for the future development of low power circuits based on the electron hydrodynamics.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782925\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si Electron Nano-Aspirator towards Emerging Hydro-Electronics
The electron nano-aspirator, which we have recently proposed and demonstrated, is a Si device with a T-shaped branch, and can enhance the MOS-transistor current by utilizing the hydrodynamic nature of electrons. Here, we present an investigation on the controllability of the device characteristics and discuss the performance improvement for the future development of low power circuits based on the electron hydrodynamics.
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