{"title":"PD-SOI CMOS器件的SPICE紧凑建模","authors":"J. Kuo","doi":"10.1109/HKEDM.2000.904203","DOIUrl":null,"url":null,"abstract":"This paper presents PD-SOI SPICE, which is based on compact BiCMOS charge-control models and includes second-order effects, electron and lattice temperatures, for circuit simulation of low-voltage CMOS circuits using deep-submicron partially-depleted (PD) SOI CMOS devices. This PD-SOI SPICE performs transient simulation of the write-access critical path in an SRAM composed of 42 PD SOI CMOS devices without convergence problems, which are commonly encountered while modeling PD devices due to kink effects.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SPICE compact modeling of PD-SOI CMOS devices\",\"authors\":\"J. Kuo\",\"doi\":\"10.1109/HKEDM.2000.904203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents PD-SOI SPICE, which is based on compact BiCMOS charge-control models and includes second-order effects, electron and lattice temperatures, for circuit simulation of low-voltage CMOS circuits using deep-submicron partially-depleted (PD) SOI CMOS devices. This PD-SOI SPICE performs transient simulation of the write-access critical path in an SRAM composed of 42 PD SOI CMOS devices without convergence problems, which are commonly encountered while modeling PD devices due to kink effects.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
PD-SOI SPICE基于紧凑的BiCMOS电荷控制模型，包含二阶效应、电子和晶格温度，可用于深亚微米部分耗尽(PD) SOI CMOS器件的低压CMOS电路仿真。该PD-SOI SPICE在由42个PD SOI CMOS器件组成的SRAM中执行写访问关键路径的瞬态仿真，而不会出现由于扭结效应而在建模PD器件时经常遇到的收敛问题。
This paper presents PD-SOI SPICE, which is based on compact BiCMOS charge-control models and includes second-order effects, electron and lattice temperatures, for circuit simulation of low-voltage CMOS circuits using deep-submicron partially-depleted (PD) SOI CMOS devices. This PD-SOI SPICE performs transient simulation of the write-access critical path in an SRAM composed of 42 PD SOI CMOS devices without convergence problems, which are commonly encountered while modeling PD devices due to kink effects.
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