一种双栅场效应管恒相可变功率放大器

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1131945

D. Drury, D. Zimmerman, D. E. Zimmerman

{"title":"一种双栅场效应管恒相可变功率放大器","authors":"D. Drury, D. Zimmerman, D. E. Zimmerman","doi":"10.1109/MWSYM.1985.1131945","DOIUrl":null,"url":null,"abstract":"A 1-Watt X-band variable power amplifier is described which employs an 1800 µm GaAs dual-gate FET. Small-signal models of the device are presented and used to design for minimum insertion phase change over the gain control range. The amplifier has a power-added efficiency of 25 percent and its insertion phase varies less than 15 degrees over a 15 dB gain control range.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Dual-Gate FET Constant Phase Variable Power Amplifier\",\"authors\":\"D. Drury, D. Zimmerman, D. E. Zimmerman\",\"doi\":\"10.1109/MWSYM.1985.1131945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1-Watt X-band variable power amplifier is described which employs an 1800 µm GaAs dual-gate FET. Small-signal models of the device are presented and used to design for minimum insertion phase change over the gain control range. The amplifier has a power-added efficiency of 25 percent and its insertion phase varies less than 15 degrees over a 15 dB gain control range.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1131945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

介绍了一种采用1800µm GaAs双栅场效应管的1瓦x波段可变功率放大器。提出了该器件的小信号模型，并用于在增益控制范围内实现最小插入相位变化的设计。该放大器的功率附加效率为25%，其插入相位在15 dB增益控制范围内变化小于15度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A Dual-Gate FET Constant Phase Variable Power Amplifier

A 1-Watt X-band variable power amplifier is described which employs an 1800 µm GaAs dual-gate FET. Small-signal models of the device are presented and used to design for minimum insertion phase change over the gain control range. The amplifier has a power-added efficiency of 25 percent and its insertion phase varies less than 15 degrees over a 15 dB gain control range.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1985 IEEE MTT-S International Microwave Symposium Digest

自引率

0.00%

发文量