{"title":"基于溶液处理的铟镓锡氧化物薄膜晶体管性能更好","authors":"Yafang Wang, Zhaogui Wang, Chuan Liu","doi":"10.23919/AM-FPD.2019.8830600","DOIUrl":null,"url":null,"abstract":"We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"367 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Indium-Gallium-Tin-Oxide thin film transistor with better performance based on the solution procession\",\"authors\":\"Yafang Wang, Zhaogui Wang, Chuan Liu\",\"doi\":\"10.23919/AM-FPD.2019.8830600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.\",\"PeriodicalId\":129222,\"journal\":{\"name\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"367 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2019.8830600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Indium-Gallium-Tin-Oxide thin film transistor with better performance based on the solution procession
We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.
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