72GS/s, 8位基于dac的有线发射机,4nm FinFET CMOS,用于200+Gb/s串行链路

T. Dickson, Z. Deniz, M. Cochet, M. Kossel, T. Morf, Young-Ho Choi, P. Francese, M. Brändli, T. Beukema, C. Baks, J. Proesel, J. Bulzacchelli, Michael P. Beakes, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, M. Meghelli, Hyo-Gyuem Rhew, D. Friedman, Michael Choi, M. Soyuer, Jongshin Shin
{"title":"72GS/s, 8位基于dac的有线发射机,4nm FinFET CMOS,用于200+Gb/s串行链路","authors":"T. Dickson, Z. Deniz, M. Cochet, M. Kossel, T. Morf, Young-Ho Choi, P. Francese, M. Brändli, T. Beukema, C. Baks, J. Proesel, J. Bulzacchelli, Michael P. Beakes, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, M. Meghelli, Hyo-Gyuem Rhew, D. Friedman, Michael Choi, M. Soyuer, Jongshin Shin","doi":"10.1109/vlsitechnologyandcir46769.2022.9830421","DOIUrl":null,"url":null,"abstract":"A DAC-based SST transmitter for wireline applications is reported in a 4nm FinFET technology. 8b resolution and high analog output bandwidth (BW) are achieved by employing a segmented architecture along with a single-ended LSB. Hybrid analog/digital tuning is used in the DAC LSB segments, resulting in well-matched MSB/LSB segments with -0.63/0.67 LSB INL and -0.16/0.43 LSB DNL. 216Gb/s PAM8 and 212Gb/s QAM64 OFDM operation are demonstrated at 288mW from a 0.95V supply.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 72GS/s, 8-bit DAC-based Wireline Transmitter in 4nm FinFET CMOS for 200+Gb/s Serial Links\",\"authors\":\"T. Dickson, Z. Deniz, M. Cochet, M. Kossel, T. Morf, Young-Ho Choi, P. Francese, M. Brändli, T. Beukema, C. Baks, J. Proesel, J. Bulzacchelli, Michael P. Beakes, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, M. Meghelli, Hyo-Gyuem Rhew, D. Friedman, Michael Choi, M. Soyuer, Jongshin Shin\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DAC-based SST transmitter for wireline applications is reported in a 4nm FinFET technology. 8b resolution and high analog output bandwidth (BW) are achieved by employing a segmented architecture along with a single-ended LSB. Hybrid analog/digital tuning is used in the DAC LSB segments, resulting in well-matched MSB/LSB segments with -0.63/0.67 LSB INL and -0.16/0.43 LSB DNL. 216Gb/s PAM8 and 212Gb/s QAM64 OFDM operation are demonstrated at 288mW from a 0.95V supply.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

报道了一种用于有线应用的基于dac的SST发射机,采用4nm FinFET技术。通过采用分段架构和单端LSB实现8b分辨率和高模拟输出带宽(BW)。在DAC LSB段中使用混合模拟/数字调谐,从而产生具有-0.63/0.67 LSB INL和-0.16/0.43 LSB DNL的良好匹配的MSB/LSB段。216Gb/s PAM8和212Gb/s QAM64 OFDM在0.95V电源下在288mW下运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 72GS/s, 8-bit DAC-based Wireline Transmitter in 4nm FinFET CMOS for 200+Gb/s Serial Links
A DAC-based SST transmitter for wireline applications is reported in a 4nm FinFET technology. 8b resolution and high analog output bandwidth (BW) are achieved by employing a segmented architecture along with a single-ended LSB. Hybrid analog/digital tuning is used in the DAC LSB segments, resulting in well-matched MSB/LSB segments with -0.63/0.67 LSB INL and -0.16/0.43 LSB DNL. 216Gb/s PAM8 and 212Gb/s QAM64 OFDM operation are demonstrated at 288mW from a 0.95V supply.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 12-bit 8GS/s RF Sampling DAC with Code-Dependent Nonlinearity Compensation and Intersegmental Current-Mismatch Calibration in 5nm FinFET Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements A 507 GMACs/J 256-Core Domain Adaptive Systolic-Array-Processor for Wireless Communication and Linear-Algebra Kernels in 12nm FINFET An 81.6dB SNDR 15.625MHz BW 3rd Order CT SDM with a True TI NS Quantizer Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1