K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong
{"title":"新型氧化铪薄膜的电学特性","authors":"K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong","doi":"10.1109/HKEDM.2002.1029155","DOIUrl":null,"url":null,"abstract":"Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical characteristics of novel hafnium oxide film\",\"authors\":\"K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong\",\"doi\":\"10.1109/HKEDM.2002.1029155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.\",\"PeriodicalId\":154545,\"journal\":{\"name\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2002.1029155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characteristics of novel hafnium oxide film
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.
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