用于E, W和g波段应用的GaN技术

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978559

A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow

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引用次数: 72

摘要

高度缩放的GaN t栅技术提供了具有高ft/fMAX和低最小噪声系数的器件，同时仍然保持GaN技术典型的高击穿电压和高线性度。在本文中，我们报道了一个功率附加效率(PAE)为27%时输出功率(Pout)为1.3 W的e波段GaN功率放大器(PA)和一个65-110 GHz超宽带低噪声放大器(LNA)。我们还报道了第一个能够在180 GHz下产生296mW/mm输出功率密度的g波段GaN放大器。所有这些组件都是通过40 nm t栅工艺(ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V)实现的，这可以使下一代发射器和接收器组件达到或超过竞争设备技术所报告的性能，同时保持> 5倍的高击穿电压，更高的线性度，动态范围和RF生存性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN Technology for E, W and G-Band Applications

Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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