Feng Li, Z. Fang, R. Misra, S. Tadigadapa, Qiming Zhang, S. Datta
{"title":"纳米Pb(Zr0.52Ti0.48)O3-Fe85B5Si10悬臂梁和谐振栅晶体管的巨磁电效应","authors":"Feng Li, Z. Fang, R. Misra, S. Tadigadapa, Qiming Zhang, S. Datta","doi":"10.1109/DRC.2011.5994416","DOIUrl":null,"url":null,"abstract":"Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr<inf>2</inf>O<inf>3</inf>, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT)-Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors\",\"authors\":\"Feng Li, Z. Fang, R. Misra, S. Tadigadapa, Qiming Zhang, S. Datta\",\"doi\":\"10.1109/DRC.2011.5994416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr<inf>2</inf>O<inf>3</inf>, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT)-Fe<inf>85</inf>B<inf>5</inf>Si<inf>10</inf> ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors
Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.