少数载流子提取对半绝缘砷化镓辐射探测器性能的影响

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088495

F. Dubecký, B. Zat’ko, V. Nečas, M. Sekáčová, J. Huran, P. Boháček, C. Ferrari, P. Kordos, A. Forster

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摘要

本文介绍了在高缺陷浓度金属-半绝缘(SI) GaAs界面中少量载流子萃取的证据和作用。论证了利用SI - GaAs if萃取系统作为准欧姆“背”电极对辐射探测器性能的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs

In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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