Improved Carrier Confinement With Engineered Electron Blocking Layer in InGaN/GaN-Based Micro-LED at a Lower Current Density

An engineered electron blocking layer structure has been proposed to alleviate the significant electron leakage problem in InGaN/GaN multiple quantum well based micro-LED at lower current density (@ 1A/cm2). The simulation results show that the level of electron concentration leakage in the p-region is drastically reduced by ~ 1016times compared to a reference structure (Sample A), added with improved hole injection efficiency @ 1 A/cm2. As a result, the internal quantum efficiency is enhanced by ~1.4 times with a 50% reduction in input operating voltage compared to Sample A to reach 1 A/cm2. In addition, the efficiency droop in our proposed structure is reduced from 45% to 10% @ 200 A/cm2 compared to Sample A.