{"title":"基于MI-SISL的5G高效功率放大器(特邀)","authors":"Kaixue Ma, Ting Feng, Lei Zhang","doi":"10.1109/IWS55252.2022.9977829","DOIUrl":null,"url":null,"abstract":"This paper gives a brief introduction of the proposed metal-integrated and substrate integrated suspended line (MI-SISL) technology, which is demonstrated as an attractive plat-form for high power and high-efficiency power amplifier integration with superiorities of high-performance and self-packaging and two MI-SISL based high power and high-efficiency power amplifiers (PAs) for 5G applications are introduced as the demonstration cases.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1961 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MI-SISL Based 5G High-Efficiency Power Amplifier (invited)\",\"authors\":\"Kaixue Ma, Ting Feng, Lei Zhang\",\"doi\":\"10.1109/IWS55252.2022.9977829\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper gives a brief introduction of the proposed metal-integrated and substrate integrated suspended line (MI-SISL) technology, which is demonstrated as an attractive plat-form for high power and high-efficiency power amplifier integration with superiorities of high-performance and self-packaging and two MI-SISL based high power and high-efficiency power amplifiers (PAs) for 5G applications are introduced as the demonstration cases.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"1961 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977829\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MI-SISL Based 5G High-Efficiency Power Amplifier (invited)
This paper gives a brief introduction of the proposed metal-integrated and substrate integrated suspended line (MI-SISL) technology, which is demonstrated as an attractive plat-form for high power and high-efficiency power amplifier integration with superiorities of high-performance and self-packaging and two MI-SISL based high power and high-efficiency power amplifiers (PAs) for 5G applications are introduced as the demonstration cases.