高na极紫外制备技术的最新进展

Advanced Lithography Pub Date : 2023-05-01 DOI:10.1117/12.2657432

S. Nagahara, Arnaud Dauendorffer, A. Thiam, Xiang Liu, Yuhei Kuwahara, C. Dinh, Soichiro Okada, S. Kawakami, H. Genjima, Noriaki Nagamine, M. Muramatsu, S. Shimura, A. Tsuboi, K. Nafus, Y. Feurprier, M. Demand, R. Ramaneti, P. Foubert, D. De Simone, Geert Vendenberghe

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引用次数: 2

摘要

高na极紫外光刻技术目前正在开发中，以跟上设备节点缩放的速度，实现更小的特征尺寸。本文讨论了金属氧化物抗蚀剂(MOR)和化学放大抗蚀剂(CAR)在EUV成像中的最新进展。研究了一种新的抗蚀剂显影方法(ESPERT™)，采用24 nm间距线和间距(L/S)图和32 nm间距柱在MOR上制备高na EUV图。图案化结果显示灵敏度和图案化塌缩幅度均有提高。采用随机光刻模拟方法研究了28nm间距的CAR接触孔图案。仿真结果表明，抗蚀膜厚度需要根据目标节距进行优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent advances in EUV patterning in preparation towards high-NA EUV

High-NA EUV lithography is currently under development to keep up with device node scaling with smaller feature sizes. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) are discussed. A newly developed resist development method (ESPERT™) was examined on MOR with 24 nm pitch line and space (L/S) patterns and 32 nm pitch pillars for preparation of high-NA EUV patterning. The patterning results showed improved sensitivity and pattern collapse margin. CAR contact hole patterning at 28 nm pitch was also examined by stochastic lithography simulation. The simulation results indicate that resist film thickness needs to be optimized for target pitches.

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Advanced Lithography

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